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1.5a ddr termination regulator ap2301 preliminary datasheet 1 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited figure 1. package types of ap2301 soic-8 general description the ap2301 linear regulator is designed to meet the jedec specification sstl-2 and sstl-18 for termi- nation of ddr-sdram. the regulator can sink or source up to 1.5a current continuously, offers enough current for most ddr appli cations. output voltage is designed to track the reference voltage within a 2% tolerance for load regulation while preventing shooting through on the output stage. on-chip thermal limiting provides protection against a combination of high cur- rent and ambient temperat ure which would create an excessive junction temperature. the ap2301, used in conjunction with series termina- tion resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in hi gh speed memory buses and distributed backplane designs. the ap2301 is available in soic-8 and to-252-5l packages. features support both ddr i (1.25v tt ) and ddr ii (0.9v tt ) requirements source and sink current up to 1.5a high accuracy output voltage at full-load adjustable v out by external resistors shutdown for standby or suspend mode operation with high -impedance output applications ddr-sdram termination ddr-ii termination sstl-2 termination to-252-5l
1.5a ddr termination regulator ap2301 preliminary datasheet 2 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited pin description pin number pin name function soic-8 to-252-5l 11 v in power input 2 2 gnd ground 3 4 refen reference voltage input and chip enable 45 v out output voltage 5, 6, 7, 8 3 v cntl supply voltage for internal circui t (internally connected for soic-8), (tab for to-252-5l) pin configuration m package figure 2. pin configuration of ap2301 (top view) 7 v cntl 6 v cntl 5 v cntl 1 2 3 4 v in gnd refen v out (soic-8) (to-252-5l) d package 1 2 3 4 5 v in gnd v cntl (tab) refen v out 8 v cntl
1.5a ddr termination regulator ap2301 preliminary datasheet 3 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited functional block diagram figure 3. functional block diagram of ap2301 package temperature range part number marking id packing type tin lead lead free tin lead lead free soic-8 0 to 125 o c ap2301m AP2301M-E1 2301m 2301m-e1 tube ap2301mtr ap2301mtr-e1 2301m 2301m-e1 tape reel to-252- 5l 0 to 125 o c ap2301d ap2301d-e1 ap2301d ap2301d-e1 tube ap2301dtr ap2301dtr-e1 ap2301d ap2301d-e1 tape reel ordering information bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type package m: soic-8 e1: lead free blank: tin lead ap2301 - tr: tape and reel blank: tube bandgap start up current limit thermal protect output control refen v in v cntl gnd v out d: to-252-5l
1.5a ddr termination regulator ap2301 preliminary datasheet 4 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited absolute maximum ratings (note 1) recommended operating conditions note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of th e device at these or any othe r conditions beyond those indicated under "recommended operating c onditions" is not implie d. exposure to "absolute maximum ratings" for extended periods may affect device reliability. parameter symbol value unit supply voltage for internal circuit v cntl 7v power dissipation p d internally limited w esd (human body model) esd 2 kv junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c package thermal resistance (free air) ja soic-8 160 o c/w to-252-5l 130 parameter symbol min typ max unit supply voltage for internal circuit v cntl (note 2, 3) ` 3.3 6 v power input ddr i v in 1.6 2.5 v cntl v ddr ii 1.8 junction temperature t j 0 125 o c note 2: keep v cntl ? v in in power on and power off sequences. note 3: for safe operation, v cntl must be tied to 3.3v rather than 5v.
1.5a ddr termination regulator ap2301 preliminary datasheet 5 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output offset voltage v os l =0 (note 4) -20 0 20 mv load regulation ddr i ? v out / v out i l =0 to 1.5a 0.8 2 % i l =0 to -1.5a 0.8 2 ddr ii i l =0 to 1.5a 1.2 3 i l =0 to -1.5a 1.2 3 quiescent current of v cntl i q no load 3 5 ma leakage current in shutdown mode i shdn v refen <0.2v, r l =180 ? 36 a protection current limit i limit 2.1 a thermal shutdown temperature t shdn 3.3v v cntl 5v 150 o c thermal shutdown hysteresis 50 o c shutdown function shutdown threshold trigger output = high 0.8 v output = low 0.2 electrical characteristics (t j =25 o c, v in =2.5v, v cntl =3.3v, v refen =1.25v, c out =10 f (ceramic), unless ot herwise specified.) note 4: v os is the voltage measurement defined as v out subtracted from v refen .
1.5a ddr termination regulator ap2301 preliminary datasheet 6 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited typical performance characteristics figure 6. threshold voltage vs. junction temperature figure 7. threshold voltage vs. junction temperature figure 4. sourcing current vs. junction temperature figure 5. sinking current vs. junction temperature -40-20 0 20406080100120 1 2 3 4 5 v cntl =3.3v v in =2.5v v out =1.25v sourcing current (a) junction temperature ( o c) -40 -20 0 20 40 60 80 100 120 1 2 3 4 5 v cntl =3.3v v in =2.5v v out =1.25v sinking current (a) junction temperature ( o c) -40-20 0 20406080100120 500 550 600 650 v cntl =3.3v v in =2.5v threshold voltage (mv) junction temperature ( o c) -40-20 0 20406080100120 500 550 600 650 v cntl =5.0v v in =2.5v threshold voltage (mv) junction temperature ( o c)
1.5a ddr termination regulator ap2301 preliminary datasheet 7 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 40 60 80 100 120 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.40 v cntl =3.3v v refen =1.0v r ds(on) ( ) junction temperature ( o c) v in =0.9v v in =0.85v v in =0.8v typical performance ch aracteristics (continued) figure 10. r ds(on) vs. junction temperature figure 11. r ds(on) vs. junction temperature figure 8. 0.9v tt at 1.5a transient response figure 9. 1.25v tt at 1.5a transient response ? time ( s) time ( s) output transient voltage (mv) output current (a) 10 -10 1.5 -1.5 output transient voltage (mv) output current (a) 0 20 -0.5 0.5.5 -2.5 10 -10 1.5 -1.5 0 20 -0.5 -2.5 0.5 (conditions:v in =2.5v, v cntl =3.3v, c out =10 f) 40 60 80 100 120 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 v cntl =5.0v v refen =1.0v r ds(on) ( ) junction temperature( o c) v in =0.9v v in =0.85v v in =0.8v ? (conditions:v in =2.5v, v cntl =3.3v, c out =10 f)
1.5a ddr termination regulator ap2301 preliminary datasheet 8 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 12. copper area vs. power dissipation 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 50 100 150 200 250 300 350 t c =25 o c t c =50 o c t c =65 o c copper area (mm 2 ) power dissipation (w) package: soic-8 no heatsink 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 100 150 200 250 300 350 copper area (mm 2 ) power dissipation (w) t c =25 o c t c =50 o c t c =65 o c package: to-252-5l no heatsink figure 13. copper area vs. power dissipation
1.5a ddr termination regulator ap2301 preliminary datasheet 9 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited typical application figure 14. typical application of ap2301 r1=r2=100k ? , r tt =50 ? /33 ? /25 ? r dummy =1k ?, as for v out discharge when v in is not present but v cntl is present c ss =1 f, c in =470 f, c cntl =47 f, c out =470 f v in v cntl refen ap2301 v out gnd r tt r dummy c out v cntl = 3.3v en r 1 r 2 c ss c cntl c in v in = 2.5v
1.5a ddr termination regulator ap2301 preliminary datasheet 10 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 5.000(0.197) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 9
1.5a ddr termination regulator ap2301 preliminary datasheet 11 jul. 2006 rev. 1. 3 bcd semiconductor manufacturing limited mechanical dimens ions (continued) to-252-5l unit: mm(inch) 2.180(0.086) 2.400(0.094) 0.000(0.000) 0.250(0.010) 0.900(0.035) 1.250(0.049) 0.450(0.018) 0.700(0.028) 0.430(0.017) 0.600(0.023) 0.430(0.017) 0.600(0.023) 6.350(0.250) 6.700(0.264) 4.300(0.169) 5.500(0.217) 5 . 9 7 0 ( 0 . 2 3 5 ) 6 . 2 2 0 ( 0 . 2 4 5 ) 2.540(0.100)bsc 5.080(0.200) bsc 9.500(0.374) 10.400(0.410) 2 . 5 5 0 ( 0 . 1 0 0 ) 3 . 2 0 0 ( 0 . 1 2 6 ) 1 . 4 0 0 ( 0 . 0 5 5 ) 1 . 7 8 0 ( 0 . 0 7 0 ) 4 . 8 0 0 ( 0 . 1 8 9 ) m i n 4.300(0.169) 5.400(0.213)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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